![Fabrication of crystal plane oriented trenches in gallium nitride using SF6 + Ar dry etching and wet etching post-treatment: Journal of Vacuum Science & Technology A: Vol 38, No 4 Fabrication of crystal plane oriented trenches in gallium nitride using SF6 + Ar dry etching and wet etching post-treatment: Journal of Vacuum Science & Technology A: Vol 38, No 4](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/6.0000120&id=images/medium/6.0000120.figures.online.highlight_f1.jpg)
Fabrication of crystal plane oriented trenches in gallium nitride using SF6 + Ar dry etching and wet etching post-treatment: Journal of Vacuum Science & Technology A: Vol 38, No 4
![Micromachines | Free Full-Text | Evolution of Si Crystallographic Planes- Etching of Square and Circle Patterns in 25 wt % TMAH | HTML Micromachines | Free Full-Text | Evolution of Si Crystallographic Planes- Etching of Square and Circle Patterns in 25 wt % TMAH | HTML](https://www.mdpi.com/micromachines/micromachines-10-00102/article_deploy/html/images/micromachines-10-00102-g008.png)
Micromachines | Free Full-Text | Evolution of Si Crystallographic Planes- Etching of Square and Circle Patterns in 25 wt % TMAH | HTML
![Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs | SpringerLink Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs10854-020-04748-y/MediaObjects/10854_2020_4748_Fig1_HTML.png)
Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs | SpringerLink
![Nanomaterials | Free Full-Text | Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice | HTML Nanomaterials | Free Full-Text | Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice | HTML](https://www.mdpi.com/nanomaterials/nanomaterials-11-01408/article_deploy/html/images/nanomaterials-11-01408-g001.png)
Nanomaterials | Free Full-Text | Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice | HTML
![Anisotropically etched patterns of AlN thin film under Cr mask layer... | Download Scientific Diagram Anisotropically etched patterns of AlN thin film under Cr mask layer... | Download Scientific Diagram](https://www.researchgate.net/profile/Jw-Berenschot/publication/222575476/figure/fig4/AS:393904911339559@1470925657974/Anisotropically-etched-patterns-of-AlN-thin-film-under-Cr-mask-layer-using-TMAH-25-wt.png)
Anisotropically etched patterns of AlN thin film under Cr mask layer... | Download Scientific Diagram
![Selective etching of AlN using TMAH (25%) with Cr mask layer at room... | Download Scientific Diagram Selective etching of AlN using TMAH (25%) with Cr mask layer at room... | Download Scientific Diagram](https://www.researchgate.net/profile/Jw-Berenschot/publication/254859027/figure/fig1/AS:669472637607949@1536626123665/Selective-etching-of-AlN-using-TMAH-25-with-Cr-mask-layer-at-room-temperature_Q640.jpg)
Selective etching of AlN using TMAH (25%) with Cr mask layer at room... | Download Scientific Diagram
![Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions - ScienceDirect Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0169433219325176-ga1.jpg)
Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions - ScienceDirect
![A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching | Micro and Nano Systems Letters | Full Text A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching | Micro and Nano Systems Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs40486-015-0012-4/MediaObjects/40486_2015_12_Fig7_HTML.gif)
A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching | Micro and Nano Systems Letters | Full Text
![Single step fabrication of Silicon resistors on SOI substrate used as Thermistors | Scientific Reports Single step fabrication of Silicon resistors on SOI substrate used as Thermistors | Scientific Reports](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fs41598-019-38753-x/MediaObjects/41598_2019_38753_Fig1_HTML.png)
Single step fabrication of Silicon resistors on SOI substrate used as Thermistors | Scientific Reports
![High speed silicon wet anisotropic etching for applications in bulk micromachining: a review | Micro and Nano Systems Letters | Full Text High speed silicon wet anisotropic etching for applications in bulk micromachining: a review | Micro and Nano Systems Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs40486-021-00129-0/MediaObjects/40486_2021_129_Fig1_HTML.png)